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Si4840/44-DEMO
C ONTACT I NFORMATION
Silicon Laboratories Inc.
Silicon Laboratories Inc.
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Austin, TX 78701
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相关代理商/技术参数
SI4840DY 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-E3 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-E3 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
SI4840DY-T1 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-T1-E3 功能描述:MOSFET 40V 14A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4840DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET TRANSISTOR TRANS POLARITY (NW)
SI4840DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4840DY-T1-GE3 功能描述:MOSFET 40V 14A 3.1W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube